Physics of electronic devices

A.Y. 2020/2021
6
Max ECTS
42
Overall hours
SSD
FIS/03
Language
Italian
Learning objectives
The course focuses on the fundamental physics concepts underlying the operation of common microelectronic devices. Starting from the fundamental properties of semiconductors, the course describes the operating principles of basic p-n junction, metal-semiconductor junction and metal-oxide-semiconductor junction. Using these building blocks, the course will provide a clear picture of the physics of conventional and advanced microelectronic devices for logic and memory applications. Moreover, the course presents an overview of the development and evolution of the key enabling technologies that allowed the fabrication and scaling of microelectronic device in modern integrated circuits.
Expected learning outcomes
At the end of the course the student will develop competences about:

1. electric and electronic properties of semiconducting materials and their band structures.
2. electrostatic analysis and charge transport in p-n junction, metal-semiconductor junction and MOS junction.
3. fundamental physics governing the operation of microelectronic devices: BJT, JFET, MESFET, MOSFET, memories
4. simple models describing the behavior of microelectronic devices
5. silicon technology for the fabrication of CMOS devices
Course syllabus and organization

Single session

Responsible
Lesson period
Second semester
Course syllabus
The course aims to present and critically discuss the basic physics of microelectronic devices starting from the fundamental properties of semiconductors. The course comprises four mian modules:
· Physics of semiconductors: band structure, charge distribution and charge transport in semiconductor at equilibrium and out of equilibrium.
· Fundamental building blocks: p-n junction, metal-semiconductor junction, metal-oxide-semiconductor junction.
· Microelectronic devices: working principles of logic (BJT, JFET, MESFET, MOSFET) and memory (volatile and non-volatile memory) device.
· Semiconductor technology: crystal growth, silicon oxidation, doping of semiconductor, deposition of thin films, lithography
Prerequisites for admission
1. basic knowledge of structure of matter
2. basic knowledge about charge transport (electric fields, currents, Ohm laws, resistance and impedence )
Teaching methods
The didactic approach is based on classroom-taught lessons aiming to present and clarify the fundamental physical concepts behind microelectronic devices. Students are requested to actively participate to the lecture by solving simple problems connected to the concepts discussed during the lessons.
Assessment methods and Criteria
Final examination will consist of a presentation about an advanced topic among the ones proposed during the course. The presentation will be followed by a colloquium focusing on the content of the presentation and on the argument in program of the course. During the colloquium, the specific competencies acquired during the course and the capability to critically discuss specific problems related to microelectronics will be evaluated.
FIS/03 - PHYSICS OF MATTER - University credits: 6
Lessons: 42 hours
Professor: Perego Michele
Professor(s)