Physics of Electronic Devices
A.Y. 2026/2027
Learning objectives
The course focuses on the fundamental physics concepts underlying the operation of common microelectronic devices. Starting
from the fundamental properties of semiconductors, the course describes the operating principles of basic p-n junction, metalsemiconductor
junction and metal-oxide-semiconductor junction. Using these building blocks, the course will provide a clear picture
of the physics of conventional and advanced microelectronic devices for logic and memory applications. Moreover, the course
presents an overview of the development and evolution of the key enabling technologies that allowed the fabrication and scaling of
microelectronic device in modern integrated circuits.
from the fundamental properties of semiconductors, the course describes the operating principles of basic p-n junction, metalsemiconductor
junction and metal-oxide-semiconductor junction. Using these building blocks, the course will provide a clear picture
of the physics of conventional and advanced microelectronic devices for logic and memory applications. Moreover, the course
presents an overview of the development and evolution of the key enabling technologies that allowed the fabrication and scaling of
microelectronic device in modern integrated circuits.
Expected learning outcomes
At the end of the course the student will develop competences about:
1. electric and electronic properties of semiconducting materials and their band structures.
2. electrostatic analysis and charge transport in p-n junction, metal-semiconductor junction and MOS junction.
3. fundamental physics governing the operation of microelectronic devices: BJT, JFET, MESFET, MOSFET, memories
4. simple models describing the behavior of microelectronic devices
5. silicon technology for the fabrication of CMOS devices
1. electric and electronic properties of semiconducting materials and their band structures.
2. electrostatic analysis and charge transport in p-n junction, metal-semiconductor junction and MOS junction.
3. fundamental physics governing the operation of microelectronic devices: BJT, JFET, MESFET, MOSFET, memories
4. simple models describing the behavior of microelectronic devices
5. silicon technology for the fabrication of CMOS devices
Lesson period: Second semester
Assessment methods: Esame
Assessment result: voto verbalizzato in trentesimi
Single course
This course can be attended as a single course.
Course syllabus and organization
Single session
Lesson period
Second semester
Course syllabus
The course aims to present and critically discuss the basic physics of microelectronic devices starting from the fundamental properties of semiconductors. The course comprises four mian modules:
· Physics of semiconductors: band structure, charge distribution and charge transport in semiconductor at equilibrium and out of equilibrium.
· Fundamental building blocks: p-n junction, metal-semiconductor junction, metal-oxide-semiconductor junction.
· Microelectronic devices: working principles of logic (BJT, JFET, MESFET, MOSFET) and memory (volatile and non-volatile memory) device.
· Semiconductor technology: crystal growth, silicon oxidation, doping of semiconductor, deposition of thin films, lithography
· Physics of semiconductors: band structure, charge distribution and charge transport in semiconductor at equilibrium and out of equilibrium.
· Fundamental building blocks: p-n junction, metal-semiconductor junction, metal-oxide-semiconductor junction.
· Microelectronic devices: working principles of logic (BJT, JFET, MESFET, MOSFET) and memory (volatile and non-volatile memory) device.
· Semiconductor technology: crystal growth, silicon oxidation, doping of semiconductor, deposition of thin films, lithography
Prerequisites for admission
1. Fundamental understanding of the structure of matter
2. Basic knowledge of charge transport (electric fields, currents, Ohm's laws, resistance, and impedance)
2. Basic knowledge of charge transport (electric fields, currents, Ohm's laws, resistance, and impedance)
Teaching methods
The didactic approach employed in this course is centered around classroom-based instruction that seeks to elucidate and clarify the fundamental physical principles underlying microelectronic devices. Students are encouraged to actively engage in the lecture by solving straightforward problems that are directly related to the concepts presented during the lessons.
Teaching Resources
Ng Sze, "Semiconductor Devices: Physics and technology (3rd edition).
Luciano Colombo, "Fisica dei semiconduttori", Zanichelli (2018)
Luciano Colombo, "Fisica dei semiconduttori", Zanichelli (2018)
Assessment methods and Criteria
The final examination will consist of a presentation on an advanced topic among those proposed during the course. The presentation will be followed by a colloquium that will focus on the content of the presentation and the argument in the program of the course. During the colloquium, the specific competencies acquired during the course and the ability to critically discuss specific problems related to microelectronics will be evaluated.
PHYS-03/A - Experimental Physics of Matter and Applications - University credits: 6
Lessons: 42 hours
Professor:
Perego Michele